Observation of Single Electron-Hole Recombination and Photon-Pumped Current in an Asymmetric Si Single-Electron Transistor
- 24 February 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 78 (8) , 1532-1535
- https://doi.org/10.1103/physrevlett.78.1532
Abstract
We observed a novel type of photocurrent by investigating Coulomb blockade oscillations around the few-electron regime in an asymmetric Si single-electron transistor. Photoexcitation generates new current peaks below the threshold voltage only for one polarity of source-drain voltage. Under low excitation, such photocurrent exhibits intermittent behavior with sudden drops and rises. The phenomena can be ascribed to the interplay of photogenerated holes and single-electron tunneling via the island. The sudden drop is a manifestation of single-electron recombination with a hole in the island.Keywords
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