Direct confirmation of the conduction-band lineup in the CuInSe2-CdS heterojunction solar cell
- 15 April 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (8) , 768-770
- https://doi.org/10.1063/1.94911
Abstract
We applied to the CuInSe2‐CdS system the Katnani–Margaritondo rule for estimating heterojunction‐band discontinuities from photoemission measurements. We found that the CuInSe2 conduction‐band edge is 0.2 eV above the CdS conduction‐band edge. This band‐edge lineup explains the efficiency of p‐CuInSe2/n‐CdS solar cells.Keywords
This publication has 8 references indexed in Scilit:
- The heterojunction parameters from a microscopic point of viewSurface Science, 1983
- On the adjustability of the “abrupt” heterojunction band-gap discontinuitySurface Science, 1983
- Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriersPhysical Review B, 1983
- Empirical rule to predict heterojunction band discontinuitiesJournal of Applied Physics, 1983
- Thin-film CuInSe2/CdS heterojunction solar cellsApplied Physics Letters, 1976
- Efficient CuInSe2/CdS solar cellsApplied Physics Letters, 1975
- CuInSe2/CdS heterojunction photovoltaic detectorsApplied Physics Letters, 1974
- Lead telluride-germanium heterojunction propertiesJournal of Applied Physics, 1974