Lead telluride-germanium heterojunction properties
- 1 February 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (2) , 972-973
- https://doi.org/10.1063/1.1663357
Abstract
PbTe–Ge p‐n heterojunctions were formed by evaporating PbTe layers on Ge substrates kept at constant temperature. The electrical characteristics are discussed, indicating that the static potential drop is essentially supported by the Ge side in all diodes. This causes a peaking of the spectral photoresponse near the Ge energy gap.This publication has 9 references indexed in Scilit:
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