GaAs-GaP Heterojunctions
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 34 (1) , 385-393
- https://doi.org/10.1002/pssb.19690340139
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- SiGaP heterojunctionsSolid-State Electronics, 1967
- The capacitance of p-n heterojunctions including the effects of interface statesIEEE Transactions on Electron Devices, 1967
- nGepGaAs HeterojunctionsSolid-State Electronics, 1966
- Optical Modulation of Current in Ge-Si n—n HeterojunctionsPhysica Status Solidi (b), 1965
- Photocurrent spectra of GeGaAs heterojunctionsSolid-State Electronics, 1964
- Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctionsIEEE Transactions on Electron Devices, 1964
- Effect of Crystal Orientation on Ge-GaAs HeterojunctionsJournal of Applied Physics, 1964
- Interface states in abrupt semiconductor heterojunctionsSolid-State Electronics, 1964
- Preparation and Properties of GaAs-GaP, GaAs-Ge, and GaP-Ge HeterojunctionsJournal of the Electrochemical Society, 1964
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962