X‐ray diffraction studies of interdiffusion in InAs—GaAs powder blends
- 1 March 1988
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 23 (3) , 369-378
- https://doi.org/10.1002/crat.2170230316
Abstract
Interdiffusion in the pseudobinary system InxGa1−xAs is investigated by means of X‐ray diffractometry of annealed powder blends. The interpretation of the experimental results by means both of the concentric spheres and concentric cubes model yields for In0.43Ga0.57As an activation energy of (5.39 ± 0.11) eV. This value shows that the diffusion mechanism could be a vacancy one as in the pure compounds. According to the lower atomic radius the Ga atoms within the temperature interval of 550–625 °C diffuse more easily than the In atoms.Keywords
This publication has 6 references indexed in Scilit:
- X-ray diffraction analysis of diffusional alloying of HfC and TaCJournal of Materials Science, 1985
- X-ray diffraction line profile analysis of diffusional homogenization in powder blendsJournal of Materials Science, 1978
- Thermodynamic Analysis of the III–V Alloy Semiconductor Phase DiagramsJournal of the Electrochemical Society, 1971
- X-Ray Diffraction Study of Interdiffusion in Cu–Ni Powder CompactsJournal of Applied Physics, 1961
- An X-ray diffraction method for the determination of composition distribution in inhomogeneous binary solid solutionsActa Crystallographica, 1960
- Elimination of the α1α2 Doublet in X-Ray PatternsReview of Scientific Instruments, 1959