Effects of Uniaxial Compression on the Zero-Bias Anomaly in-Silicon Schottky-Barrier Tunnel Junctions
- 24 January 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 28 (4) , 225-228
- https://doi.org/10.1103/physrevlett.28.225
Abstract
The behavior of the zero-bias anomaly in Schottky-barrier tunnel junctions subjected to large static uniaxial stress is found to correlate with the stress-induced changes in the overlap of the impurity wave functions in the vicinity of the Mott transition.
Keywords
This publication has 10 references indexed in Scilit:
- Zero-Bias Anomaly in Irradiated Pb-GaAs Tunnel Junctions, and the Mott TransitionPhysical Review Letters, 1971
- Anomalous Metal-Semiconductor Tunneling Near the Mott TransitionPhysical Review Letters, 1971
- Impurity Band Conduction with Strong Electron CorrelationsJournal of the Physics Society Japan, 1968
- Conduction in non-crystalline systemsPhilosophical Magazine, 1968
- Effect of uniaxial compression on impurity conduction in p-siliconPhysics Letters A, 1967
- Effect of Uniaxial Compression on Impurity Conduction in-GermaniumPhysical Review B, 1965
- Electron correlations in narrow energy bands III. An improved solutionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1964
- Effect of Uniaxial Compression on Impurity Conduction in-Type GermaniumPhysical Review B, 1962
- The theory of impurity conductionAdvances in Physics, 1961
- Electrical Properties of Germanium Semiconductors at Low TemperaturesPhysical Review B, 1955