GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy

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Abstract
GaAs/AlGaAs quantum structures were grown in tetrahedral-shaped recesses (TSRs) on GaAs (111)B substrates at different growth rates by metalorganic vapor phase epitaxy. Observation of cathodoluminescence revealed that GaAs quantum structures with different layer thicknesses were formed at {100} edge regions, {110} and {111}A sidewalls and the {111} bottom region of the TSR. The luminescence from the bottom region of the TSRs was clearly seen in the sample grown at a large growth rate. With increasing growth rate, the thickness in the bottom region increased, whereas the thickness at the edge regions decreased. This is explained by a reduction in the migration distance of Ga adatoms from the {111} bottom region to the other regions.