Electronic structure of (100) semiconductor heterojunctions

This publication has 15 references indexed in Scilit:

• Comment on ‘‘Theory of semiconductor heterojunctions: The role of quantum dipoles’’
  Physical Review B, 1985
• Energy-gap discontinuities and effective masses for $\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}-{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ quantum wells
  Physical Review B, 1984
• Effective two-dimensional Hamiltonian at surfaces
  Physical Review B, 1983
• Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriers
  Physical Review B, 1983
• Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices
  Physical Review B, 1983
• Self-consistent calculation of properties of GaAs-AlAs superlattices with homopolar interfaces
  Physical Review B, 1982
• Atomic structure and properties of polar Ge-GaAs(100) interfaces
  Physical Review B, 1981
• Electronic structure of the [001] InAs-GaSb superlattice
  Physical Review B, 1979
• Self-consistent calculations of interface states and electronic structure of the (110) interfaces of Ge-GaAs and AlAs-GaAs
  Physical Review B, 1978
• Theory of the energy-band lineup at an abrupt semiconductor heterojunction
  Physical Review B, 1977