Electronic structure of the [001] InAs-GaSb superlattice

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Abstract
The self-consistent pseudopotential method has been applied to describe the electronic structure of the abrupt [001] InAs-GaSb superlattice. According to the electron affinity rule, the bottom of the conduction band of InAs lies below the top of the valence band of GaSb. Consequently, physically interesting phenomena have been expected for this system. Since the possible charge redistribution at the junction determines the dipole potential and the relative lineup of the band edges, self-consistency in charge distribution is required of a quantitative theory of a superlattice. The calculated band-edge lineup, band dispersions, and the electronic configuration at the junction are presented and discussed.