Dimer reconstruction and electronic surface states on clean and hydrogenated diamond (100) surfaces
- 15 March 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (11) , 7334-7351
- https://doi.org/10.1103/physrevb.53.7334
Abstract
We present ab initio investigations of the structural and electronic properties of clean and hydrogen-covered diamond (100) surfaces within local-density-functional theory. Our calculations are based on a variational solution of the Kohn-Sham equations using a preconditioned conjugate-gradient approach and on the optimization of the atomic structure via a quasi-Newton quench based on the exact Hellmann-Feynman forces. The computations are performed in a plane-wave basis, the electron-ion interaction is described by optimized ultrasoft pseudopotentials. We find that the clean and the monolayer-covered surfaces reconstruct in a (2×1) cell via the formation of rows of symmetric π-bonded dimers. Further hydrogenation to a coverage of 1.5 ML stabilizes a surface with a (1×1) periodicity in the C layers, albeit with a low H-desorption energy for the formation of the reconstructed monohydride surface. The two-step desorption process is in good agreement with experimental observations. Electronic surface states within the bulk gap are predicted for the clean surface, but not for the monohydride case. The detailed analysis of the layer-resolved local densities of states and of the dispersion of the surface states demonstrates that the results are in good agreement with recent photoemission experiments. A negative electron affinity is predicted for the monohydride surface, but not for the clean surface. © 1996 The American Physical Society.Keywords
This publication has 69 references indexed in Scilit:
- High-temperature chemistry of CVD (chemical vapor deposition) diamond growthPure and Applied Chemistry, 1994
- Ab initiostudy of diamond C(100) surfacesPhysical Review B, 1993
- Theoretical studies of clean and hydrogenated diamond (100) by molecular mechanicsJournal of Vacuum Science & Technology A, 1992
- Mechanism of diamond growth by chemical vapor deposition on diamond (100), (111), and (110) surfaces: Carbon-13 studiesJournal of Applied Physics, 1991
- Adsorption of H, CH3, CH2 and C2H2 on 2 × 1 restructured diamond (100): Theoretical study of structures, bonding, and migrationSurface Science, 1991
- Empirical potential for hydrocarbons for use in simulating the chemical vapor deposition of diamond filmsPhysical Review B, 1990
- Hydrogen chemisorption and the structure of the diamond C(100)-(2 × 1) surfaceSurface Science, 1990
- Texture formation in polycrystalline diamond filmsJournal of Applied Physics, 1990
- Total energy minimization for surfaces of covalent semiconductors C, Si, Ge, and α-SnSurface Science, 1988
- The diamond surface: atomic and electronic structureSurface Science, 1986