Temperature dependence of Schottky barrier height on Si: Experimental evidence for Fermi energy pinning relative to either valence or conduction band
- 1 January 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (1) , 101-104
- https://doi.org/10.1007/bf02655556
Abstract
No abstract availableKeywords
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