Ge surface segregation at low temperature during SiGe growth by molecular beam epitaxy
- 8 August 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (6) , 711-713
- https://doi.org/10.1063/1.112277
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Epitaxial Growth and the Art of Computer SimulationsScience, 1992
- Pathways for dimer string growth during Si deposition on Si(100)−2 × 1Surface Science Letters, 1991
- Pathways for dimer string growth during Si deposition on Si(100)-2 × 1Surface Science, 1991
- Adsorption and diffusion sites of a Si atom on a reconstructed Si(100)-(2 × 1) surfaceSurface Science, 1991
- Growth kinetics simulation of the Al-Ga self-organization on GaAs(100) stepped surfacesSurface Science, 1991
- Step stability, domain coverage, and nonequilibrium kinetics in Si(001) molecular-beam epitaxyPhysical Review B, 1990
- Growth mechanism for molecular-beam epitaxy of group-IV semiconductorsPhysical Review B, 1988
- Surface segregation of Sb on Si(100) during molecular beam epitaxy growthSurface Science, 1988
- Epitaxial growth quality optimization by supercomputerApplied Physics Letters, 1987
- Kinetic limitations to surface segregation during MBE growth of III?V compounds: Sn in GaAsApplied Physics A, 1984