Step stability, domain coverage, and nonequilibrium kinetics in Si(001) molecular-beam epitaxy
- 15 May 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (14) , 10198-10201
- https://doi.org/10.1103/physrevb.41.10198
Abstract
Vicinal (2×1)/(1×2) domain surfaces are studied by computer simulation, with attention focused upon the evolution of monatomic steps in which upper terrace dimers are orientated either normal or parallel to the step edge. Comparison with half-integer-order reflection high-energy electron-diffraction intensities demonstrates a pronounced dependence of step stability on growth rate. Further support for the model is provided by a scanning tunneling micrograph of the equilibrated surface.Keywords
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