Simulation of recovery kinetics in Si(001) molecular-beam epitaxy
- 15 July 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (2) , 1369-1372
- https://doi.org/10.1103/physrevb.40.1369
Abstract
We present computer simulations of growth interruption in Si(001) molecular-beam epitaxy. Inclusion of an explicit anisotropy in surface nearest-neighbor diffusion barriers enables detailed reproduction of observed layer completion dependencies in the recovery profile of the reflection high-energy electron-diffraction (RHEED) specular intensity. The origin of this dependency is identified and discussed in light of the sensitivity of the specular RHEED intensity to surface morphology.Keywords
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