Dependence of electrical properties on film thickness in Pb(ZrxTi1−x)O3 thin films produced by metalorganic chemical vapor deposition

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Abstract
Strongly c‐axis oriented Pb(ZrxTi1−x)O3 (PZT) thin films with tetragonal perovskite structure (0.45≤x≤0.52) were epitaxially grown on (100)Pt/(100)MgO substrates using metalorganic chemical vapor deposition. Film thickness could be varied by altering the growth time. The electrical properties of PZT thin films sharply change below a thickness of 0.5 μm: the dielectric constant and remanent polarization decrease while the coercive field increases. These phenomena are explained by a model in which a layer with low dielectric constant exists in series with the normal PZT layer. The origins of this layer are systematically studied and found to be the intrinsic stress produced by the coalescence of crystal grains.