Direct observation of the spatial hole burning and the saturation of the spontaneous emission in InGaAsP/InP lasers
- 1 July 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 16 (7) , 706-708
- https://doi.org/10.1109/jqe.1980.1070559
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Room-temperature c.w. operation of InP/InGaAsP/InP double heterostructure diode lasers emitting at 1.55 μmElectronics Letters, 1979
- Spectral hole burning in GaAs junction lasersApplied Physics Letters, 1979
- Direct observation of the saturation behavior of spontaneous emission in semiconductor lasersApplied Physics Letters, 1978