Direct observation of the saturation behavior of spontaneous emission in semiconductor lasers
- 1 March 1978
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (5) , 322-323
- https://doi.org/10.1063/1.90036
Abstract
The saturation behavior of the spontaneous emission intensity from a transverse-mode stabilized (GaAl)As laser is studied. The spatial hole burning is observed from the top surface of the laser, and a complete gain saturation is confirmed to occur in the lasing region.Keywords
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