Saturation behavior of the spontaneous emission from double-heterostructure junction lasers operating high above threshold
- 1 February 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 9 (2) , 267-272
- https://doi.org/10.1109/jqe.1973.1077481
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Behavior of spontaneous emission across threshold in GaAs junction lasersApplied Physics Letters, 1972
- Reduction in the rate of increase of spontaneous emission from double-heterostructure injection lasers at thresholdApplied Physics Letters, 1972
- Reproducible Liquid-Phase-Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser DiodesJournal of Applied Physics, 1972
- Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operationProceedings of the IEEE, 1972
- The Current Dependence of the Intensity of Spontaneous Emission of GaAs Injection Lasers to Full Operating PowerApplied Physics Letters, 1971
- Quantum-Mechanical Rate Equations for Semiconductor LasersPhysical Review B, 1969
- Resonant modes of GaAs junction lasers - II: High-injection levelIEEE Journal of Quantum Electronics, 1969
- Optimum Stripe Width for Continuous Operation of GaAs Junction LasersJournal of Applied Physics, 1969
- Spectral Output of Semiconductor LasersJournal of Applied Physics, 1964