Surface processing of CdTe compound semiconductor by excimer laser doping
- 1 April 1999
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 142 (1-4) , 227-232
- https://doi.org/10.1016/s0169-4332(98)00657-6
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
- Hamamatsu Photonics K.K.
This publication has 8 references indexed in Scilit:
- Radical assisted metalorganic chemical vapor deposition of CdTe on GaAs and carrier transport mechanism in CdTe/n-GaAs heterojunctionJournal of Applied Physics, 1998
- Heavily doped p-type ZnSe layer formation by excimer laser dopingJournal of Crystal Growth, 1998
- Preparation of Heavily N-Type ZnSe Doped by Iodine in Remote Plasma Enhanced Metal Organic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1997
- Laser-induced melting of predeposited impurity doping technique used to fabricate shallow junctionsJournal of Applied Physics, 1987
- XeCl Excimer laser annealing used in the fabrication of poly-Si TFT'sIEEE Electron Device Letters, 1986
- Macroscopic theory of pulsed-laser annealing. I. Thermal transport and meltingPhysical Review B, 1981
- Efficient Si solar cells by laser photochemical dopingApplied Physics Letters, 1981
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979