Fabrication of single-electron transistors and circuits using SOIs
- 30 November 2002
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 46 (11) , 1723-1727
- https://doi.org/10.1016/s0038-1101(02)00141-7
Abstract
No abstract availableKeywords
This publication has 42 references indexed in Scilit:
- Manipulation of elementary charge in a silicon charge-coupled deviceNature, 2001
- Single Electron Transistor Fabricated on Heavily Doped Silicon-on-Insulator SubstrateJapanese Journal of Applied Physics, 2001
- Coulomb blockade in quasimetallic silicon-on-insulator nanowiresApplied Physics Letters, 1999
- Metal–oxide–semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator materialJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETsJapanese Journal of Applied Physics, 1997
- Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrateApplied Physics Letters, 1996
- Observation of quantum effects and Coulomb blockade in silicon quantum-dot transistors at temperatures over 100 KApplied Physics Letters, 1995
- Coulomb blockade in a silicon tunnel junction deviceApplied Physics Letters, 1994
- Coulomb blockade in silicon based structures at temperatures up to 50 KApplied Physics Letters, 1993
- Conductance oscillations periodic in the density of one-dimensional electron gasesPhysical Review B, 1990