Effect of junction depth on the performance of a diffused n+p silicon solar cell

This publication has 9 references indexed in Scilit:

• Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors
  IEEE Transactions on Electron Devices, 1979
• Influence of bandgap narrowing on the performance of silicon n-p solar cells
  Solid-State Electronics, 1978
• The pn-product in silicon
  Solid-State Electronics, 1977
• Measurements of bandgap narrowing in Si bipolar transistors
  Solid-State Electronics, 1976
• Computer-aided numerical analysis of silicon solar cells
  Solid-State Electronics, 1976
• A study of efficiency in low resistivity silicon solar cells
  Solid-State Electronics, 1976
• Auger-rekombination in Si
  Solid State Communications, 1973
• A self-consistent iterative scheme for one-dimensional steady state transistor calculations
  IEEE Transactions on Electron Devices, 1964
• Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K
  Physical Review B, 1955