High-Quality InSb Growth on GaAs and Si by Low-Pressure Metalorganic Chemical Vapor Deposition
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We report the first InSb film growth on Si by low-pressure metalorganic chemical vapor deposition. High-quality layers of InSb have been grown on Si and GaAs substrates. InSb films displayed mirror-like morphology on both substrates. X-ray full width at half maximum of 171 arcsec on GaAs and 361 arcsec on Si for a InSb layer thickness of 3.1 μm were measured. Room-temperature Hall mobilities of 67,000 and 48,000 cm2/V.s with carrier concentration of 1.5×1016 and 2.3×1016 cm−3 have been achieved for InSb films grown on GaAs and Si substrates, respectively. A 4.8 μ-thick InSb film on GaAs exhibited mobility of 76,200 cm2/Vs at 240 K.Keywords
This publication has 8 references indexed in Scilit:
- Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxyJournal of Applied Physics, 1991
- High-mobility InSb grown by organometallic vapor phase epitaxyApplied Physics Letters, 1991
- Growth of InSb on GaAs by metalorganic chemical vapor depositionJournal of Crystal Growth, 1991
- Molecular beam epitaxial growth and characterization of InSb on SiApplied Physics Letters, 1989
- Heteroepitaxy of InSb on silicon by metalorganic magnetron sputteringApplied Physics Letters, 1988
- GaAs avalanche photodiodes and the effect of rapid thermal annealing on crystalline quality of GaAs grown on Si by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1987
- Growth of InSb and InAs1 − x Sb x by OM‐CVDJournal of the Electrochemical Society, 1984
- Growth characteristics of LPE InSb and InGaSbJournal of Electronic Materials, 1980