High-mobility InSb grown by organometallic vapor phase epitaxy
- 29 April 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (17) , 1905-1907
- https://doi.org/10.1063/1.105069
Abstract
The highest mobility InSb epilayer grown to date by organometallic vapor phase epitaxy has been achieved by utilizing high-purity organometallic sources, choosing a reactor geometry to reproducibly control the source concentrations above the substrate, and using a high- integrity reactor system. On a p-type InSb substrate, an unintentionally doped layer had a 77 K n-type carrier concentration and mobility of 1.4×1015 cm−3 and 2.53×105 cm2/V s. Growths on GaAs substrates were greatly affected by the lattice mismatch and had 77 K carrier concentrations similar to the InSb case but with mobilities of (5.0–9.0)×104 cm2/V s. The crystal quality, morphology, and cyclotron resonance characteristics are reported and found to be comparable to state-of-the-art molecular beam epitaxy layers.Keywords
This publication has 6 references indexed in Scilit:
- Doping andp-n junction formation in InAs1-xSbx/lnSb SLS’s by MOCVDJournal of Electronic Materials, 1989
- The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor depositionJournal of Crystal Growth, 1986
- Growth of InSb and InAs1 − x Sb x by OM‐CVDJournal of the Electrochemical Society, 1984
- Growth characteristics of LPE InSb and InGaSbJournal of Electronic Materials, 1980
- Cyclotron resonance characterization of ion-implanted carriers in semiconductorsJournal of Vacuum Science and Technology, 1976
- Distribution Coefficients and Carrier Mobilities in InSbJournal of Applied Physics, 1959