Doping andp-n junction formation in InAs1-xSbx/lnSb SLS’s by MOCVD
- 1 November 1989
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (6) , 775-780
- https://doi.org/10.1007/bf02657532
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- High photoconductive gain in lateral InAsSb strained-layer superlattice infrared detectorsApplied Physics Letters, 1988
- Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVDJournal of Crystal Growth, 1988
- InAsSb Strained-Layer Superlattices: A New Class Of Far Infrared MaterialsPublished by SPIE-Intl Soc Optical Eng ,1988
- Photoluminescence and the band structure of InAsSb strained-layer superlatticesApplied Physics Letters, 1988
- Demonstration of an InAsSb strained-layer superlattice photodiodeApplied Physics Letters, 1988
- Extended infrared response of InAsSb strained-layer superlatticesApplied Physics Letters, 1988
- Detection of individual 0.4–28 μm wavelength photons via impurity-impact ionization in a solid-state photomultiplierApplied Physics Letters, 1987
- Electroabsorption in GaAs/AlGaAs coupled quantum well waveguidesApplied Physics Letters, 1987
- MOCVD of indium phosphide and indium gallium arsenide using trimethylindium-trimethylamine adductsJournal of Crystal Growth, 1986
- InAsSb strained-layer superlattices for long wavelength detector applicationsJournal of Vacuum Science & Technology B, 1984