Aligned, Coexisting Liquid and Solid Regions in Pulsed and CW Laser Annealing of Si
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Aligned, coexisting liquid and solid regions are observed in cw laser annealing of polycrystalline Si films on quartz substrates. These stripe patterns are the precursors of surface topography that exists after cooling. It is proposed that a similar situation exists in the pulse annealing process. A calculation of the temperature evolution which assumes stripe symmetry and kinetic restraints of the crystallization process has been carried out. These calculations indicate a lattice temperature of between 1100 and 1300 K, 10 nsec after the sample has fully solidified.Keywords
This publication has 6 references indexed in Scilit:
- Surface topography of laser annealed siliconSolid State Communications, 1982
- Surface ripples on silicon and gallium arsenide under picosecond laser illuminationApplied Physics Letters, 1982
- Laser-Induced Melt Dynamics of Si and SilicaPhysical Review Letters, 1981
- Macroscopic theory of pulsed-laser annealing. I. Thermal transport and meltingPhysical Review B, 1981
- Raman Measurement of Lattice Temperature during Pulsed Laser Heating of SiliconPhysical Review Letters, 1980
- Periodic regrowth phenomena produced by laser annealing of ion-implanted siliconApplied Physics Letters, 1978