Surface topography of laser annealed silicon
- 31 July 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 43 (3) , 203-206
- https://doi.org/10.1016/0038-1098(82)90111-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Experimental tests for boson condensation and superconductivity in semiconductors during pulsed beam annealingSolid State Communications, 1981
- Defect photoluminescence from pulsed-laser-annealed ion-implanted SiApplied Physics Letters, 1981
- Silicon surface structures after pulsed laser annealingSurface Science, 1980
- Dynamics of Q-switched laser annealingApplied Physics Letters, 1979
- On the origin of periodic surface structure of laser-annealed semiconductorsApplied Physics Letters, 1978
- Periodic regrowth phenomena produced by laser annealing of ion-implanted siliconApplied Physics Letters, 1978
- CO2 laser-produced ripple patterns on NixP1−x surfacesApplied Physics Letters, 1977