Experimental tests for boson condensation and superconductivity in semiconductors during pulsed beam annealing
- 30 September 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 39 (12) , 1285-1291
- https://doi.org/10.1016/0038-1098(81)90228-3
Abstract
No abstract availableThis publication has 31 references indexed in Scilit:
- Pulsed Raman measurement of the onset of recrystallization in laser annealingApplied Physics Letters, 1981
- Raman Measurement of Lattice Temperature during Pulsed Laser Heating of SiliconPhysical Review Letters, 1980
- Reasons to believe pulsed laser annealing of Si does not involve simple thermal meltingPhysics Letters A, 1979
- Dopant segregation in silicon by pulsed-laser annealing: A test case for the concept of thermal meltingPhysics Letters A, 1979
- Calculation of the dynamics of surface melting during laser annealingApplied Physics Letters, 1979
- A computer simulation of laser annealing silicon at 1.06 μmApplied Physics Letters, 1979
- Segregation Effects in Cu-Implanted Si after Laser-Pulse MeltingPhysical Review Letters, 1978
- Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed siliconApplied Physics Letters, 1978
- Arsenic diffusion in silicon melted by high-power nanosecond laser pulsingApplied Physics Letters, 1978
- Some features of laser annealing of implanted silicon layersRadiation Effects, 1978