The effect of fixed space charge on space-charge-limited current injection in impurity-band-conduction semiconductors
- 1 February 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (2) , 443-449
- https://doi.org/10.1016/0038-1101(94)e0076-q
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Theory of injected current behavior associated with blocked impurity-band-conductionSolid-State Electronics, 1990
- Temperature dependence of the figures of merit for blocked impurity band detectorsJournal of Applied Physics, 1988
- Blocked impurity band detectors—an analytical model: Figures of meritJournal of Applied Physics, 1987
- Detection of individual 0.4–28 μm wavelength photons via impurity-impact ionization in a solid-state photomultiplierApplied Physics Letters, 1987
- The theory of high-low junction contacts at low temperature with application to extrinsic silicon detectorsInfrared Physics, 1977
- Neutral impurity scattering in semiconductorsPhysical Review B, 1975
- Recombination of Electrons at Ionized Donors in Silicon at Low TemperaturesPhysical Review Letters, 1973
- Simplified Theory of Space-Charge-Limited Currents in an Insulator with TrapsPhysical Review B, 1956