Annealing of Supersaturated Low-Temperature Substitutional Gold in Silicon

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Abstract
An annealing experiment of supersaturated low-temperature substitutional gold in silicon was made by an ordinary annealing method. The gold concentration was determined from the resistivity by a four-point probe method, the Hall coefficient and DLTS with no appreciable difference in the results. The dependences of the annealing characteristics upon the temperature and the initial value of the gold concentration were examined. The annealing was represented by a firstorder reaction and the time constant decreased with an increase in the initial value. From these results, it was concluded that homogeneous nucleation occured during the annealing and that a strain energy of low-temperature substitutional gold decreased with nucleus formation.