Negative persistent photoeffect on cyclotron resonance in InAs/Al0.5Ga0.5Sb quantum wells

15 July 1994

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 76 (2) , 667-670
https://doi.org/10.1063/1.357809

Abstract

Far‐infrared magneto‐optical spectroscopy has been used to investigate the negative persistent photoconductivity (NPPC) effect in InAs/Al_0.5Ga_0.5Sb quantum wells at low temperatures. After an in situ cross‐gap illumination, the electron density in the InAs well is reduced by about 28%, and the cyclotron effective mass decreases from (0.0342±0.0002)m₀ to (0.0322±0.0002)m₀. The time scale for the NPPC buildup transient determined from the results of a photon‐dose experiment is on the order of 10 ms with an illumination power flux of ∼10 mW/cm².

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