Ti-Interlayer Mediated Epitaxy of CoSi2 with Ti Capping
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Increased uniformity and thermal stability of CoSi2 thin films by Ti cappingApplied Physics Letters, 1995
- Resistance and structural stabilities of epitaxial CoSi2 films on (001) Si substratesJournal of Applied Physics, 1992
- Growth of epitaxial CoSi2 on (100)SiApplied Physics Letters, 1991
- Control of misoriented grains and pinholes in CoSi2 grown on Si(001)Applied Physics Letters, 1990
- Mesotaxy: Single-crystal growth of buried CoSi2 layersApplied Physics Letters, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Liquid phase growth of epitaxial Ni and Co silicidesApplied Physics Letters, 1983