Liquid phase growth of epitaxial Ni and Co silicides

1 September 1983

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 43 (5) , 476-478
https://doi.org/10.1063/1.94370

Abstract

Epitaxial Ni and Co silicides have been fabricated using pulsed laser melting and ultrarapid solidification techniques. Interfacial instabilities and cell formation are suppressed during the liquid phase epitaxy by melting mono or disilicide layers. Single crystal NiSi2 and CoSi2 films have been grown on (100) and (111) Si. This method does not require ultrahigh vacuum deposition or reaction techniques.

Keywords

This publication has 6 references indexed in Scilit:

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Applied Physics Letters, 1983
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