Internal structure and oscillator strengths of excitons in strained α-GaN

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Abstract
We calculate the excitonic exchange interaction in α-GaN, and find it to be about 2 meV. A theoretical modeling of excitons is performed, and the oscillator strengths of radiative levels are calculated as a function of strain for (0001)-grown epilayers. In particular, we find that the strength of optical transitions are extremely sensitive to the residual strain field in view of the small value of the spin-orbit interaction. Our calculation shows agreement with low-temperature reflectance investigations in GaN epilayers grown on sapphire substrates.