Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier
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- 9 June 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (23) , 4092-4094
- https://doi.org/10.1063/1.1580631
Abstract
Electron-spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single-step tunneling is the dominant transport mechanism. The current–voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like LO phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses, indicating that tunneling enables significant spin injection from a metal into a semiconductor.Keywords
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