25 Gbit/s 1.3 µm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system
- 13 August 2009
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 45 (17) , 900-902
- https://doi.org/10.1049/el.2009.1846
Abstract
A high-performance 1.3 µm InGaAlAs electroabsorption modulator integrated with a DFB laser for the metro-area 100 Gbit/s Ethernet system (100GBASE-LR4 and -ER4) has been developed. 40 km transmission under 25 Gbit/s operation on singlemode fibre that is required for 100GBASE-ER4 application at 40°C is demonstrated for the first time.Keywords
This publication has 1 reference indexed in Scilit:
- High-Power 25-Gb/s Electroabsorption Modulator Integrated With a Laser DiodeIEEE Photonics Technology Letters, 2009