Evidence of hot-electron transfer into an upper valley in GaAs
- 30 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (26) , 2854-2857
- https://doi.org/10.1103/physrevlett.56.2854
Abstract
The measurement of current transport due to ballistic, quasimonoenergetic, hot electrons injected into thin layers of GaAs indicates that some electrons transfer into the first satellite valleys (L valleys). Applying hydrostatic pressure, which changes the relative energies of the valleys, results in a corresponding shift of the electron energy for which transfer is evident. Transfer of ≃25% at atmospheric pressure was estimated for a transit time of 0.03 ps. We have also measured the conduction-band discontinuity between GaAs and AlGaAs and find it to be insensitive to hydrostatic pressure.Keywords
This publication has 16 references indexed in Scilit:
- Direct Observation of Ballistic Transport in GaAsPhysical Review Letters, 1985
- Photoluminescence studies of a GaAs-As superlattice at 8–300 K under hydrostatic pressure (0–70 kbar)Physical Review B, 1985
- Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infraredSolid-State Electronics, 1981
- Photoluminescence in heavily doped GaAs. II. Hydrostatic pressure dependencePhysical Review B, 1980
- Electron transport and band structure ofalloysPhysical Review B, 1980
- Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAsPhysical Review B, 1977
- GaAs lower conduction-band minima: Ordering and propertiesPhysical Review B, 1976
- Ordering and Absolute Energies of theandConduction Band Minima in GaAsPhysical Review Letters, 1976
- Schottky-Barrier Electroreflectance: Application to GaAsPhysical Review B, 1973
- Mechanism of the Gunn Effect from a Pressure ExperimentPhysical Review Letters, 1965