Atomic structure of the As-rich InAs(100)surface
- 15 June 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (23) , 15285-15289
- https://doi.org/10.1103/physrevb.59.15285
Abstract
The surface atomic structure of the molecular-beam epitaxy prepared As-rich InAs(100) reconstruction has been solved by synchrotron radiation surface x-ray diffraction. Analysis of a large set of nonequivalent in-plane diffraction peaks and seven out-of-plane rods yields the so-called model, a now recognized model for the As-rich GaAs(100) structure. The structure comprises two As dimers in the top layer and one As dimer in the third layer below the first incomplete In layer.
Keywords
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