Temperature dependence of boron neutralization in silicon by atomic hydrogen
- 15 December 1990
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (12) , 6532-6534
- https://doi.org/10.1063/1.346831
Abstract
The dependence of boron neutralization on the hydrogenation temperature was studied systematically in 2-Ω-cm, B-doped crystalline silicon. The maximum penetration depth of H increases with temperature. The migration of H has an activation energy of 0.39 eV. The B neutralization, measured as surface resistivity, reaches a maximum at 100 °C. The surface resistivity reverts to the bulk value above 160 °C. The bond breaking that reactivates the acceptors has an activation energy of 0.76 eV.This publication has 14 references indexed in Scilit:
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