Tuning the detection wavelength of quantum-well infrared photodetectors by single high-energy implantation
- 1 January 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (1) , 10-12
- https://doi.org/10.1063/1.1332984
Abstract
Single high-energy (0.9 MeV) proton implantation and rapid thermal annealing was used to tune the spectral response of the quantum-well infrared photodetectors (QWIPs). In addition to the large redshift of the QWIPs’ response wavelength after implantation, either narrowed or broadened spectrum was obtained at different interdiffusion extent. In general, the overall device performance for the low-dose implantation was not significantly degraded. In comparison with the other implantation schemes, this single high-energy implantation is the most effective and simple technique in tuning the wavelength of QWIPs, thus, to achieve the fabrication of multicolor detectors.Keywords
This publication has 24 references indexed in Scilit:
- Interdiffused quantum-well infrared photodetectors for color sensitive arraysApplied Physics Letters, 1999
- Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasersJournal of Applied Physics, 1999
- A four-color quantum well infrared photodetectorApplied Physics Letters, 1999
- Intermixing in strained InGaAs/GaAs quantum-well infrared photodetectorsApplied Physics Letters, 1999
- Redshifting and broadening of quantum-well infrared photodetector's response via impurity-free vacancy disorderingIEEE Journal of Selected Topics in Quantum Electronics, 1998
- Large energy shifts in GaAs-AlGaAs quantum wells by proton irradiation-induced intermixingApplied Physics Letters, 1996
- Grating coupled multicolor quantum well infrared photodetectorsApplied Physics Letters, 1995
- Quantum well intermixingSemiconductor Science and Technology, 1993
- High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectorsApplied Physics Letters, 1990
- Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructuresJournal of Applied Physics, 1988