Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitrides
- 1 February 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 197 (1-2) , 99-105
- https://doi.org/10.1016/s0022-0248(98)00894-x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Thermodynamic study on phase separation during MOVPE growth of In Ga1−NJournal of Crystal Growth, 1998
- Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaNJapanese Journal of Applied Physics, 1998
- Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III NitridesJapanese Journal of Applied Physics, 1997
- Thermodynamic analysis of the MOVPE growth of In Ga1−NJournal of Crystal Growth, 1997
- Low pressure MOVPE of GaN and heterostructuresJournal of Crystal Growth, 1997
- Unstable Region of Solid Composition in Ternary Nitride Alloys Grown by Metalorganic Vapor-Phase EpitaxyJapanese Journal of Applied Physics, 1996
- Growth and characterization of bulk InGaN films and quantum wellsApplied Physics Letters, 1996
- Growth Kinetics and Catalytic Effects in the Vapor Phase Epitaxy of Gallium NitrideJournal of the Electrochemical Society, 1978
- Raman Scattering Spectroscopy Applied to the Study of Chemical Vapor Deposition SystemsJournal of the Electrochemical Society, 1976
- Mass Spectrometric Studies of Vapor-Phase Crystal GrowthJournal of the Electrochemical Society, 1972