Thermodynamic study on phase separation during MOVPE growth of In Ga1−N

This publication has 5 references indexed in Scilit:

• Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
  Applied Physics Letters, 1997
• Recombination dynamics of localized excitons in ${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$N-${\mathrm{In}}_{0.05}$${\mathrm{Ga}}_{0.95}$N multiple quantum wells
  Physical Review B, 1997
• Thermodynamic analysis of the MOVPE growth of In Ga1−N
  Journal of Crystal Growth, 1997
• Unstable Region of Solid Composition in Ternary Nitride Alloys Grown by Metalorganic Vapor-Phase Epitaxy
  Japanese Journal of Applied Physics, 1996
• Thermodynamic Analysis of In_xGa_1-xN Alloy Composition Grown by Metalorganic Vapor Phase Epitaxy
  Japanese Journal of Applied Physics, 1996