Recovery of Damage in Rad-Hard MOS Devices during and after Irradiation by Electrons, Protons, Alphas, and Gamma Rays
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4157-4161
- https://doi.org/10.1109/TNS.1983.4333100
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Radiation Effects on MOS Devices: Dosimetry, Annealing, Irradiation Sequence, and SourcesIEEE Transactions on Nuclear Science, 1983
- Irradiated Silicon Gate MOS Device Bias AnnealingIEEE Transactions on Nuclear Science, 1983
- The Damage Equivalence of Electrons, Protons, Alphas and Gamma Rays in Rad-Hard MOS DevicesIEEE Transactions on Nuclear Science, 1983
- CMOS/SOS 4K RAMs Hardened to 100 Krads(Si)IEEE Transactions on Nuclear Science, 1982
- Two-stage process for buildup of radiation-induced interface statesJournal of Applied Physics, 1979
- Short-Term Charge Annealing in Electron-Irradiated Silicon DioxideIEEE Transactions on Nuclear Science, 1971