CMOS/SOS 4K RAMs Hardened to 100 Krads(Si)
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 29 (6) , 1707-1711
- https://doi.org/10.1109/tns.1982.4336433
Abstract
Two CMOS/SOS 4K memories were fabricated with a recently developed, hardened SOS process. Memory functionality after radiation doses well in excess of 100 Krads(Si) was demonstrated. The critical device processing steps were identified. The radiation-induced failure mode of the memories is understood in terms of the circuit organization and the radiation behavior of the individual transistors in the memories.Keywords
This publication has 5 references indexed in Scilit:
- 16K CMOS/SOS asynchronous static RAMIEEE Journal of Solid-State Circuits, 1979
- The effect of process variations on interfacial and radiation-induced charge in silicon-on-sapphire capacitorsIEEE Transactions on Electron Devices, 1978
- Silicon-sapphire interface charge trapping - effects of sapphire type and EPI growth conditionsIEEE Transactions on Nuclear Science, 1976
- Radiation induced leakage current in N-channel SOS transistorsIEEE Transactions on Nuclear Science, 1974
- Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate InsulatorIEEE Transactions on Nuclear Science, 1971