Evolution of surface topography during metalorganic vapor phase epitaxy of InP/InGaAs/InP quantum well heterostructures
- 10 October 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (15) , 1949-1951
- https://doi.org/10.1063/1.112826
Abstract
The evolution of surfacetopography during epitaxialgrowth of lattice matched InP/InGaAs/InP on (100) InP substrate is observed using in situelasticlight scattering supported by ex situatomic force microscopy. A topographically smooth growth transition from InP to InGaAs is observed. However, the InP‐on‐InGaAs interface exhibits three‐dimensional nucleation followed by planarization and two‐dimensional epitaxy. The three‐dimensional phase is a result of the high surface energy of InP relative to InGaAs. A growth pause after the InGaAsQW increases the transient roughness of the InPsurface and increases the thickness of InP required for planarization.Keywords
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