Low-Temperature Crystallization of Sol-Gel-Derived Pb(Zr, Ti)O3 Thin Films
- 1 September 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (9S)
- https://doi.org/10.1143/jjap.38.5346
Abstract
Sol-gel derived Pb(Zr,Ti)O3 capacitors were prepared by low-pressure annealing and the two-step annealing techniques. Well-saturated D–E hysteresis was obtained at 650°C with low-pressure rapid thermal annealing. The low-pressure first anneal lowered the crystallization temperature of sol-gel-derived Pb(Zr,Ti)O3 thin films. Highly reliable and low-voltage operation Pb(Zr,Ti)O3 capacitors were obtained using a two-step annealing techniques under low-pressure at 550°C.Keywords
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