X-ray Radiographs Taken with Silicon Single Crystal Wafers by Divergent X-ray Method

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Abstract
By our own Divergent X-ray Method, X-ray radiographs consisted of broad Laue-spots with X-ray spectral lines were simply and easily taken with the wafers of silicon single crystals of various kinds. On each of the Laue-spots, many X-ray spectral lines of various shapes and ground figures consisted of somewhat broadened lines, straightened or curved, were revealed. It is considered that these X-ray spectral lines and the ground figures of the Laue-spots are mostly produced by the dislocations and other imperfections in the crystal wafer, and that from the appearances of these X-ray spectral lines and ground figures the bodily distribution of the dislocations and other imperfections can be presumed.