Photoelectric thresholds for tetrahedrally coordinated semiconductors
- 1 August 1974
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 15 (3) , 575-578
- https://doi.org/10.1016/0038-1098(74)91146-6
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Bond-Orbital Model and the Properties of Tetrahedrally Coordinated SolidsPhysical Review B, 1973
- Electronic Properties of an Amorphous Solid. I. A Simple Tight-Binding TheoryPhysical Review B, 1971
- Surface Properties of II-VI CompoundsPhysical Review B, 1967
- Photoelectric Emission and Work Function of InPPhysical Review B, 1966
- Reflectivity, Photoelectric Emission, and Work Function of AlSbPhysical Review B, 1965
- Photoelectric Properties of Cleaved GaAs, GaSb, InAs, and InSb Surfaces; Comparison with Si and GePhysical Review B, 1965
- The variation of the dielectric constant of diamond with pressurePhilosophical Magazine, 1964
- Direct and Indirect Excitation Processes in Photoelectric Emission from SiliconPhysical Review B, 1962
- Dielectric constant of germanium and silicon as a function of volumeJournal of Physics and Chemistry of Solids, 1959