Gain measurement of high characteristic temperature1.3 µm GaInAsP/InP strained-layer quantum well lasers withtemperature dependent reflectivity (TDR) mirror
- 13 April 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (8) , 644-645
- https://doi.org/10.1049/el:19950381
Abstract
By comparing the optical gain of 1.3 µm strained-layer quantum well lasers with characteristic temperatures T0 of 150 K (high) and 60 K (typical), it is found that temperature insensitive net gain plays an important role in reducing the temperature sensitivity of the threshold current. The resonance frequency for high T0 lasers exhibits temperature insensitivity, resulting from the temperature insensitive net gain characteristics.Keywords
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