Formation of self-disorder agglomerates in dislocation-free silicon during crystal growth
- 16 April 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 70 (2) , 441-449
- https://doi.org/10.1002/pssa.2210700211
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Microdefects in a non-striated distribution in floating-zone silicon crystalsJournal of Crystal Growth, 1981
- The formation of swirl defects in silicon by agglomeration of self-interstitialsJournal of Crystal Growth, 1977
- TEM observation of dislocation loops correlated with individual swirl defects in as-grown siliconApplied Physics Letters, 1974