Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12S)
- https://doi.org/10.1143/jjap.30.3700
Abstract
By both numerical simulation and experimental investigation, we found it possible to enlarge the grain size (∼3000 Å) of polycrystalline silicon (poly-Si) films by excimer laser annealing, using a new method to control the solidification process of molten Si - low-temperature (≦400°C) substrate heating during laser annealing. Poly-Si thin-film transistors (TFTs) fabricated by this new excimer laser annealing method showed a high field-effect mobility of 230 cm2/V·s, and good uniformity of field-effect mobility (±10%) within the effective laser irradiation area.Keywords
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